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AFT09MS015Nt1 1 rf device data freescale semiconductor, inc. rf power ldmos transistor high ruggedness n--channel enhancement--mode lateral mosfet designed for mobile two--way radio applications with frequencies from 136 to 941 mhz. the high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in mobile radio equipment. narrowband performance (12.5 vdc, i dq = 100 ma, t a =25 ? c, cw) frequency (mhz) g ps (db) ? d (%) p out (w) 870 (1) 17.2 77.0 16 wideband performance (12.5 vdc, t a =25 ? c, cw) frequency (mhz) p in (w) g ps (db) ? d (%) p out (w) 136--174 0.38 16.0 60.0 15 350--470 0.23 18.5 60.0 16 760--870 (2) 0.32 16.8 52.3 15 load mismatch/ruggedness frequency (mhz) signal type vswr p in (w) test voltage result 870 (1) cw > 65:1 at all phase angles 0.5 (3 db overdrive) 17 no device degradation 1. measured in 870 mhz narrowband test circuit. 2. measured in 760--870 mhz uhf broadband reference circuit. features ? characterized for operation from 136 to 941 mhz ? unmatched input and output allowing wide frequency range utilization ? integrated esd protection ? integrated stab ility enhancements ? wideband ? full power across the band ? exceptional thermal performance ? extreme ruggedness ? high linearity for: tetra, ssb ? in tape and reel. t1 suffix = 1,000 units, 16 mm tape width, 7--inch reel. typical applications ? output or driver stage vhf band mobile radio ? output or driver stage uhf band mobile radio ? output or driver stage for 700--800 mhz mobile radio document number: AFT09MS015N rev. 1, 7/2014 freescale semiconductor technical data 136?941 mhz, 16 w, 12.5 v wideband rf power ldmos transistor AFT09MS015Nt1 pld--1.5w figure 1. pin connections note: the center pad on the backside of the package is the source terminal for the transistor. drain gate ? freescale semiconductor, inc., 2014. a ll rights reserved.
2 rf device data freescale semiconductor, inc. AFT09MS015Nt1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +40 vdc gate--source voltage v gs --6.0, +12 vdc operating voltage v dd 17, +0 vdc storage temperature range t stg --65 to +150 ? c case operating temperature range t c --40 to +150 ? c operating junction temperature (1,2) t j --40 to +150 ? c total device dissipation @ t c =25 ? c derate above 25 ? c p d 125 1.0 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 85 ? c, 15 w cw, 12.5 vdc, i dq = 100 ma, 870 mhz r ? jc 1.0 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2500 v machine model (per eia/jesd22--a115) a, passes 150 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =40vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds = 12.5 vdc, v gs =0vdc) i dss ? ? 2 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 600 nadc on characteristics gate threshold voltage (v ds =10vdc,i d =78 ? adc) v gs(th) 1.8 2.2 2.6 vdc drain--source on--voltage (v gs =10vdc,i d =0.78adc) v ds(on) ? 0.15 ? vdc forward transconductance (v ds =10vdc,i d =5.9adc) g fs ? 4.4 ? s dynamic characteristics reverse transfer capacitance (v ds = 12.5 vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 1.04 ? pf output capacitance (v ds = 12.5 vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 34 ? pf input capacitance (v ds = 12.5 vdc, v gs =0vdc ? 30 mv(rms)ac @ 1 mhz) c iss ? 74 ? pf 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. (continued)
AFT09MS015Nt1 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (in freescale test fixture, 50 ohm system) v dd = 12.5 vdc, i dq = 100 ma, p in =0.3w,f=870mhz common--source amplifier output power p out ? 16.0 ? w drain efficiency ? d ? 77.0 ? % load mismatch/ruggedness (in freescale test fixture, 50 ohm system) i dq = 100 ma frequency (mhz) signal type vswr p in (w) test voltage, v dd result 870 cw > 65:1 at all phase angles 0.5 (3 db overdrive) 17 no device degradation
4 rf device data freescale semiconductor, inc. AFT09MS015Nt1 typical characteristics note: mttf value represents the total cumulative operating time under indicated test conditions. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 20 0.1 100 08 4 v ds , drain--source voltage (volts) figure 2. capacitance versus drain--source voltage c, capacitance (pf) 12 1 16 10 measured with ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc c rss c iss c oss 2 6 10 14 18 160 10 9 90 t j , junction temperature ( ? c) figure 3. mttf versus junction temperature ? cw 10 7 10 6 110 120 130 140 mttf (hours) 150 10 5 10 8 v dd = 12.5 vdc 2.02 amps i d =1.47amps 1.68 amps 100
AFT09MS015Nt1 5 rf device data freescale semiconductor, inc. 870 mhz narrowband production test fixture figure 4. AFT09MS015Nt1 narrowband test circuit component layout ? 870 mhz AFT09MS015N rev. 1 c1 c2 c3 b1 c4 c6 c6 c5 l1 c8 c9 c15 c17 c10 c16 l2 c18 c19 l3 c20 c21 c11 c12 c13 c14 d53709 c7 table 6. AFT09MS015Nt1 narrowband test circui t component designations and values ? 870 mhz part description part number manufacturer b1 rf bead, short 2743019447 fair-rite c1 22 ? f, 35 v tantalum capacitor t491x226k035at kemet c2, c13 0.1 ? f chip capacitors cdr33bx104akws avx c3, c12 0.01 ? f chip capacitors c0805c103k5rac kemet c4, c11 56 pf chip capacitors atc100b560ct500xt atc c5, c8, c9 5.6 pf chip capacitors atc100b5r6ct500xt atc c6, c7 3.3 pf chip capacitors atc100b3r3ct500xt atc c14 330 ? f, 35 v electrolytic capacitor mcgpr35v337m10x16-rh multicomp c15, c10 9.1 pf chip capacitors atc100b9r1ct500xt atc c16, c17 7.5 pf chip capacitors atc100b7r5ct500xt atc c18, c19 6.2 pf chip capacitors atc100b6r2bt500xt atc c20 1.5 pf chip capacitor atc100b1r5bt500xt atc c21 3.9 pf chip capacitor atc100b3r9ct500xt atc l1 5.0 nh, 2 turn inductor a02tklc coilcraft l2 8.0 nh, 3 turn inductor a03tklc coilcraft l3 2.5 nh, 1 turn inductor a01tklc coilcraft pcb rogers ro4350b, 0.030 ? , ? r =3.66 d53709 mtl
6 rf device data freescale semiconductor, inc. AFT09MS015Nt1 figure 5. AFT09MS015Nt1 narrowband test circuit schematic ? 870 mhz rf input rf output l1 z4 z3 c5 z1 z2 z5 z7 z10 z9 l2 v ds v gs z12 z11 z13 c21 z14 c2 c3 c6 c11 c12 c13 c1 + c7 c14 + z6 c8 c9 z8 c10 c15 c16 c17 c18 c19 z15 l3 z16 c20 z17 z18 c4 b1 dut z1 0.328 ?? 0.080 ? microstrip z2 0.490 ?? 0.120 ? microstrip z3 0.610 ?? 0.320 ? microstrip z4 0.107 ?? 0.320 ?? 0.466 ? taper z5 0.082 ?? 0.466 ?? 0.620 ? taper z6 0.070 ?? 0.620 ? microstrip z7 0.300 ?? 0.620 ? microstrip z8 0.370 ?? 0.620 ? microstrip z9 0.375 ?? 0.620 ? microstrip z10 0.120 ?? 0.620 ? microstrip z11 0.198 ?? 0.320 ? microstrip z12 0.044 ?? 0.320 ? microstrip z13 0.159 ?? 0.620 ?? 0.320 ? taper z14 0.320 ?? 0.320 ? microstrip z15 0.113 ?? 0.320 ? microstrip z16 0.599 ?? 0.120 ? microstrip z17 0.071 ?? 0.120 ? microstrip z18 0.238 ?? 0.080 ? microstrip table 7. AFT09MS015Nt1 narrowband test circuit microstrips ? 870 mhz description microstrip description microstrip
AFT09MS015Nt1 7 rf device data freescale semiconductor, inc. typical characteristics ? 870 mhz 0 0 12 12344.5 10 4 8 6 14 p out , output power (watts) p in =0.30w v dd = 12.5 vdc, f = 870 mhz 16 18 22 v gs , gate--source voltage (volts) figure 6. output power versus gate--source voltage at a constant input power p in , input power (watts) g ps , power gain (db) 0 10 6 0.01 40 60 50 10 30 16 14 1 2 18 70 80 110 0.1 ? d , drain efficiency (%) 1 20 22 0 figure 7. power gain, output power and drain efficiency versus input power 20 20 p out , output power (watts) 8 2 0.5 3.5 2.5 1.5 p in =0.15w 4 2 90 100 g ps p out v dd = 12.5 vdc, i dq = 100 ma f = 870 mhz ? d v dd = 12.5 vdc, i dq = 100 ma, p out =15w f mhz z source ? z load ? 870 0.80 + j0.80 2.05 + j1.80 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 8. narrowband series equivalent source and load impedance ? 870 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
8 rf device data freescale semiconductor, inc. AFT09MS015Nt1 760--870 mhz uhf broadband reference circuit table 8. 760--870 mhz uhf broadband performance (in freescale reference circuit, 50 ohm system) v dd = 12.5 volts, i dq = 100 ma, t a =25 ? c, cw frequency (mhz) p in (w) g ps (db) ? d (%) p out (w) 760 0.29 17.1 51.1 15.0 815 0.24 18.0 57.7 15.0 870 0.30 17.0 59.2 15.0 table 9. load mismatch/ruggedness (in freescale reference circuit) frequency (mhz) signal type vswr p in (w) test voltage, v dd result 815 cw > 65:1 at all phase angles 0.64 (3 db overdrive) 15 no device degradation
AFT09MS015Nt1 9 rf device data freescale semiconductor, inc. 760--870 mhz uhf broadband reference circuit figure 9. AFT09MS015Nt1 uhf broa dband reference circuit com ponent layout ? 760--870 mhz d55295 c1 c3 c6 c5 c4 r1 b1 c9 j1 c10 b2 l1 c11 c12 c13 c16 c15 c14 q1 c2 c8 c7 table 10. AFT09MS015Nt1 uhf broadba nd reference circuit co mponent designations and values ? 760--870 mhz part description part number manufacturer b1, b2 rf beads 2743019447 fair-rite c1, c5, c6, c7, c8 20 pf chip capacitors gqm2195c2e200gb12d murata c2 8.2 pf chip capacitor gqm2195c2e8r2bb12d murata c3 10 pf chip capacitor gqm2195c2e100fb12d murata c4, c13 56 pf chip capacitors gqm2195c2e560gb12d murata c9 1 ? f chip capacitor grm31mr71h105ka88l murata c10 10 ? f chip capacitor grm31cr61h106ka12l murata c11, c12 12 pf chip capacitors gqm2195c2e120fb12d murata c14, c15 5.6 pf chip capacitors gqm2195c2e5r6bb12d murata c16 100 pf chip capacitor gqm2195c2e101gb12d murata j1 right-angle breakaway headers (3 pins) 22-28-8360 molex l1 22 nh air core inductor 0908sq-22njl coilcraft q1 rf power ldmos transistor AFT09MS015Nt1 freescale r1 200 ? , 1/8 w chip resistor crcw0805200rjnea vishay pcb 0.020 ? , ? r =4.8,fr4 d55295 mtl
10 rf device data freescale semiconductor, inc. AFT09MS015Nt1 figure 10. AFT09MS015Nt1 uhf broadband reference circuit schematic ? 760--870 mhz rf input rf output r1 z3 c1 z1 z2 z5 z6 z10 z9 l1 v dd v gs z11 z14 c4 c13 c9 c2 c5 c6 z7 c11 c12 z15 z16 c14 z17 z18 b1 dut c3 z4 c7 c8 z8 z12 c15 c16 z19 z13 c10 b2 z1 0.150 ?? 0.050 ? microstrip z2 0.100 ?? 0.034 ? microstrip z3 0.485 ?? 0.034 ? microstrip z4 0.065 ?? 0.034 ? microstrip z5 0.040 ?? 0.250 ? microstrip z6 0.222 ?? 0.250 ? microstrip z7 0.130 ?? 0.250 ? microstrip z8 0.027 ?? 0.250 ? microstrip z9 0.066 ?? 0.034 ? microstrip z10 0.386 ?? 0.034 ? microstrip z11 0.027 ?? 0.180 ? microstrip z12 0.160 ?? 0.034 ? microstrip z13 0.350 ?? 0.034 ? microstrip z14 0.210 ?? 0.180 ? microstrip z15 0.215 ?? 0.180 ? microstrip z16 0.065 ?? 0.034 ? microstrip z17 0.450 ?? 0.034 ? microstrip z18 0.100 ?? 0.034 ? microstrip z19 0.150 ?? 0.050 ? microstrip table 11. AFT09MS015Nt1 narrowband test circuit microstrips ? 760--870 mhz description microstrip description microstrip
AFT09MS015Nt1 11 rf device data freescale semiconductor, inc. typical characteristics ? 760--870 mhz uhf broadband reference circuit 740 g ps f, frequency (mhz) figure 11. power gain, drain efficiency and output power versus frequency at a constant input power 12 21 14 64 61 58 55 18 17 16 ? d , drain efficiency (%) ? d g ps , power gain (db) 19 17 13 780 800 840 860 880 52 p out ,output power (watts) v dd = 12.5 vdc p in = 0.32 w (avg.) i dq = 100 ma 18 16 15 14 760 820 20 15 p out 0 0 v gs , gate--source voltage (volts) figure 12. output power versus gate--source voltage 20 1 2 34 10 5 p out , output power (watts) f = 815 mhz v dd = 12.5 vdc p in =0.32w 0 0 detail a 1.5 0.511.5 2 1.25 1 1.75 f = 815 mhz detail a v dd = 12.5 vdc p in =0.16w p out , output power (watts) v gs , gate--source voltage (volts) 15 v dd = 12.5 vdc p in =0.16w 0.75 0.5 v dd = 12.5 vdc p in =0.32w 0.25 0.75 1.25 0.25 1.75 figure 13. power gain, drain efficiency and output power versus input power and frequency p in , input power (watts) g ps , power gain (db) 13 18 17 0.01 2 g ps 14 25 21 0 7 21 20 19 22 45 65 85 0.1 p out v dd = 12.5 vdc i dq = 100 ma 16 870 mhz ? d ? d , drain efficiency (%) p out ,output power (watts) 15 14 1 28 5 f = 815 mhz 760 mhz 870 mhz 815 mhz 760 mhz 815 mhz 870 mhz 760 mhz
12 rf device data freescale semiconductor, inc. AFT09MS015Nt1 760--870 mhz uhf broadband reference circuit f = 760 mhz f = 870 mhz f = 870 mhz f = 760 mhz z source z load z o =5 ? v dd = 12.5 vdc, i dq = 100 ma, p out =15w f mhz z source ? z load ? 760 1.35 + j0.86 2.53 - j0.83 770 1.23 + j0.79 2.44 - j0.68 780 1.04 + j0.78 2.29 - j0.39 790 0.90 + j0.80 2.25 - j0.16 800 0.84 + j0.84 2.30 - j0.02 810 0.85 + j0.92 2.49 + j0.02 820 0.92 + j0.99 2.79 - j0.06 830 0.96 + j1.02 2.99 - j0.19 840 0.88 + j1.03 3.01 - j0.21 850 0.71 + j1.04 2.85 - j0.05 860 0.54 + j1.05 2.68 + j0.14 870 0.43 + j1.10 2.62 + j0.25 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 14. uhf broadband series equivalent source and load impedance ? 760--870 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
AFT09MS015Nt1 13 rf device data freescale semiconductor, inc. figure 15. pcb pad layout for pld--1.5w (7.11) 0.28 (4.91) 0.165 (3.94) 0.155 (2.26) 0.089 (2.16) 0.085 solder pad with thermal via structure. (mm) inches figure 16. product marking a 9m15 n( )b yyww
14 rf device data freescale semiconductor, inc. AFT09MS015Nt1 package dimensions
AFT09MS015Nt1 15 rf device data freescale semiconductor, inc.
16 rf device data freescale semiconductor, inc. AFT09MS015Nt1
AFT09MS015Nt1 17 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 feb. 2014 ? initial release of data sheet 1 july 2014 ? fig. 6, output power versus gate--source voltage at a constant input power: updated p in values to reflect correct unit of measure, p. 7 ? fig. 8, narrowband series equivalent source and load impedance -- 870 mhz: updated z source and z load values to match final data from product model, p. 7
18 rf device data freescale semiconductor, inc. AFT09MS015Nt1 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2014 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: AFT09MS015N rev. 1, 7/2014

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